Mani Vaidyanathan received the B.A.Sc. and M.A.Sc. degrees from the University of Waterloo, and the Ph.D. degree from the University of British Columbia. He has held the positions of Assistant Research Scientist at the University of California - San Diego, working in the area of radio-frequency electronics, and Visiting Assistant Professor at Purdue University, working in the area of computational nanoelectronics. He is currently a Professor and Program Director of Engineering Physics at the University of Alberta.
Dr. Vaidyanathan’s research interests are in understanding nanoscale transistors and circuits for future technologies. State-of-the-art modeling and simulation approaches, such as the semi-classical Boltzmann transport equation (BTE) and the fully quantum-mechanical non-equilibrium Green’s function approach (NEGF), are used to assess the performance potential and operating physics of emerging transistors. Work is also underway in the area of radio-frequency (RF) circuits. Collaborators include local experimentalists, academics from Europe, and industrial partners in North America, including IBM and Qualcomm.
PN junction semiconductor basics, charge flow and diode equation. Zener diodes. BJT and MOSFET devices and operating regions. Amplifier basics: biasing, gain, input and output resistance, analysis and design. Large signal effects. Requires payment of additional student instructional support fees. Refer to the Fees Payment Guide in the University Regulations and Information for Students section of the Calendar. Prerequisite: ECE 203 or E E 250. Credit may be obtained in only one of ECE 302 or E E 340.Fall Term 2020
Fundamental concepts related to current flow in nanoelectronic devices. Energy level diagram and the Fermi function. Single-energy-level model for current flow and associated effects, such as the quantum of conductance, Coulomb blockade, and single electron charging. The Schroedinger equation and quantum mechanics for applications in nanoelectronics. Matrix-equation approach for numerical band structure calculations of transistor channel materials. k-space, Brillouin zones, and density of states. Subbands for quantum wells, wires, dots, and carbon nanotubes. Current flow in nanowires and ballistic nanotransistors, including minimum possible channel resistance, quantum capacitance, and the transistor equivalent circuit under ballistic operation. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 456 or E E 456.Winter Term 2021
Review of energy-band theory of crystalline materials and Bloch's theorem. Semiclassical electron dynamics, including electrons, holes, crystal momentum, particle motion, and effective mass. Carrier statistics. Fermi's golden rule and carrier scattering. Relaxation times and carrier mobility. The Boltzmann transport equation, the method of moments, and the drift-diffusion equations. Advanced transport and applications to emerging ECE Calendar changes electronic devices. Prerequisite: An undergraduate course in solid-state devices or physics, or consent of the instructor.Fall Term 2020