Fundamental concepts related to current flow in nanoelectronic devices. Energy level diagram and the Fermi function. Single-energy-level model for current flow and associated effects, such as the quantum of conductance, Coulomb blockade, and single electron charging. The Schroedinger equation and quantum mechanics for applications in nanoelectronics. Matrix-equation approach for numerical band structure calculations of transistor channel materials. k-space, Brillouin zones, and density of states. Subbands for quantum wells, wires, dots, and carbon nanotubes. Current flow in nanowires and ballistic nanotransistors, including minimum possible channel resistance, quantum capacitance, and the transistor equivalent circuit under ballistic operation. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 456 or E E 456.