Manisha Gupta has received a PhD in Electrical Engineering from Yale University, a MS in Electrical Engineering from Rensselaer Polytechnic Institute and an undergraduate degree from Mumbai University in India in Instrumentation Engineering. During her PhD, she developed the first novel tunable gallium arsenide deep center laser based on electrical injection. She has worked on wafer level 3D integration of chips during her MS, along with yield studies on damascene structures. As a postdoctoral fellow and research associate, she has conducted research in the area of optical materials including different growth techniques like Molecular Beam Epitaxy and Pulsed Laser deposition for growth and optimization of different materials for device applications. She has also worked on several laser applications based on light scattering for label free detection of cells and also for oil sands applications. She has industrial experience at the Alberta Center for Micro Nano Technology Products, where she worked as an optoelectronics product engineer, and at H2Gen Innovations where she worked as an Instrumentation engineer, in addition to research experience at a National Laboratory in India. In essence, her strengths are in optical materials, photonics, devices and sensing.
My research is multidisciplinary, and is mainly focused on developing flexible electronic sensors with optical and sensing elements for applications in photovoltaics, lighting, biosensing, bio stimulation and therapeutic treatment. The research will focus on engineering optical materials and devices, which can be integrated on flexible substrates while retaining their photonic properties and developing novel devices based on them. Another main research area will be growth of novel biomaterials, which can be used for tissue and bone implants.
Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.Winter Term 2021