PN junction semiconductor basics, charge flow and diode equation. Zener diodes. BJT and MOSFET devices and operating regions. Amplifier basics: biasing, gain, input and output resistance, analysis and design. Large signal effects. Requires payment of additional student instructional support fees. Refer to the Tuition and Fees page in the University Regulations section of the Calendar. Prerequisite: ECE 203 or E E 250. Credit may be obtained in only one of ECE 302 or E E 340.
Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.