ECE 450 - Nanoscale Phenomena in Electronic Devices

3 units (fi 8)(EITHER, 3-0-3/2)

Faculty of Engineering

Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.

No syllabi

Winter Term 2025

Lectures

Section Capacity Class times Login to view Instructor(s) and Location
LECTURE B1
(72118)
40
2025-01-06 - 2025-04-09 (MWF)
09:00 - 09:50

Labs

Section Capacity Class times Login to view Instructor(s) and Location
LAB H11
(72119)
8
2025-01-06 - 2025-04-09 (M)
14:00 - 16:50
LAB H21
(72120)
8
2025-01-06 - 2025-04-09 (T)
14:00 - 16:50
LAB H31
(72121)
8
2025-01-06 - 2025-04-09 (W)
14:00 - 16:50
LAB H41
(70503)
8
2025-01-06 - 2025-04-09 (R)
14:00 - 16:50
LAB H51
(70505)
8
2025-01-06 - 2025-04-09 (F)
14:00 - 16:50