Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.
| Section | Capacity | Class times | Login to view Instructor(s) and Location | 
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                                                    LECTURE B1 (81859) | 40 |  2026-01-05 - 2026-04-10 (MWF)  09:00 - 09:50 |  | 
| Section | Capacity | Class times | Login to view Instructor(s) and Location | 
|---|---|---|---|
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                                                    LAB H11 (81860) | 8 |  2026-01-05 - 2026-04-10 (M)  14:00 - 16:50 |  | 
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                                                    LAB H21 (81861) | 8 |  2026-01-05 - 2026-04-10 (T)  14:00 - 16:50 |  | 
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                                                    LAB H31 (81862) | 8 |  2026-01-05 - 2026-04-10 (W)  14:00 - 16:50 |  | 
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                                                    LAB H41 (80449) | 8 |  2026-01-05 - 2026-04-10 (R)  14:00 - 16:50 |  |