Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.
Section | Capacity | Dates + Times | Instructor(s) |
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LECTURE B1
(12435) |
50 |
2024-01-08 - 2024-04-12
MWF 09:00 - 09:50 (ETLC E1-008)
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Section | Capacity | Dates + Times | Instructor(s) |
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LAB H11
(12436) |
10 |
2024-01-08 - 2024-04-12
M 14:00 - 16:50 (Location TBD)
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LAB H21
(12437) |
10 |
2024-01-08 - 2024-04-12
T 14:00 - 16:50 (Location TBD)
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LAB H31
(12438) |
10 |
2024-01-08 - 2024-04-12
W 14:00 - 16:50 (Location TBD)
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LAB H41
(10574) |
10 |
2024-01-08 - 2024-04-12
H 14:00 - 16:50 (Location TBD)
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LAB H51
(10576) |
10 |
2024-01-08 - 2024-04-12
F 14:00 - 16:50 (Location TBD)
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