Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.
Section | Capacity | Class times | Login to view Instructor(s) and Location |
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LECTURE B1
(72118) |
40 |
2025-01-06 - 2025-04-09 (MWF)
09:00 - 09:50
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Section | Capacity | Class times | Login to view Instructor(s) and Location |
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LAB H11
(72119) |
8 |
2025-01-06 - 2025-04-09 (M)
14:00 - 16:50
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LAB H21
(72120) |
8 |
2025-01-06 - 2025-04-09 (T)
14:00 - 16:50
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LAB H31
(72121) |
8 |
2025-01-06 - 2025-04-09 (W)
14:00 - 16:50
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LAB H41
(70503) |
8 |
2025-01-06 - 2025-04-09 (R)
14:00 - 16:50
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LAB H51
(70505) |
8 |
2025-01-06 - 2025-04-09 (F)
14:00 - 16:50
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