ECE 450 - Nanoscale Phenomena in Electronic Devices

★ 3 (fi 8)(EITHER, 3-0-3/2)

Faculty of Engineering

Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.

Winter Term 2022

Lectures

LECTURE B1 (68734)
Capacity: 50
2022-01-05 - 2022-04-08
MWF 09:00 - 09:50 (NRE 2-127)

Primary Instructor: Manisha Gupta

Labs

LAB H11 (68736)
Capacity: 10
2022-01-05 - 2022-04-08
M 14:00 - 16:50 (TBD)

LAB H21 (68738)
Capacity: 10
2022-01-05 - 2022-04-08
T 14:00 - 16:50 (TBD)

LAB H31 (68740)
Capacity: 10
2022-01-05 - 2022-04-08
W 14:00 - 16:50 (TBD)

LAB H41 (62098)
Capacity: 10
2022-01-05 - 2022-04-08
H 14:00 - 16:50 (TBD)

LAB H51 (62104)
Capacity: 10
2022-01-05 - 2022-04-08
F 14:00 - 16:50 (TBD)