ECE 450 - Nanoscale Phenomena in Electronic Devices

★ 3 (fi 8)(EITHER, 3-0-3/2)

Faculty of Engineering

Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.

No syllabi

Winter Term 2023

Lectures

Section Capacity Dates + Times Instructor(s)
LECTURE B1
(43082)
50
2023-01-05 - 2023-04-12
MWF 09:00 - 09:50 (ETLC E1-018)
Primary Instructor: Manisha Gupta

Labs

Section Capacity Dates + Times Instructor(s)
LAB H11
(43083)
10
2023-01-05 - 2023-04-12
M 14:00 - 16:50 (Location TBD)
LAB H21
(43084)
10
2023-01-05 - 2023-04-12
T 14:00 - 16:50 (Location TBD)
LAB H31
(43085)
10
2023-01-05 - 2023-04-12
W 14:00 - 16:50 (Location TBD)
LAB H41
(40746)
10
2023-01-05 - 2023-04-12
H 14:00 - 16:50 (Location TBD)
LAB H51
(40748)
10
2023-01-05 - 2023-04-12
F 14:00 - 16:50 (Location TBD)