Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.