ECE 302 - Electronic Devices

★ 3 (fi 8)(EITHER, 3-1S-3/2)

Faculty of Engineering

PN junction semiconductor basics, charge flow and diode equation. Zener diodes. BJT and MOSFET devices and operating regions. Amplifier basics: biasing, gain, input and output resistance, analysis and design. Large signal effects. Requires payment of additional student instructional support fees. Refer to the Tuition and Fees page in the University Regulations section of the Calendar. Prerequisite: ECE 203 or E E 250. Credit may be obtained in only one of ECE 302 or E E 340.

No syllabi

Fall Term 2024

Lectures

Section Capacity Class times Instructor(s)
LECTURE A1
(46777)
125
2024-09-03 - 2024-12-09 (MWF)
10:00 - 10:50
SAB 3-25
LECTURE A2
(50586)
125
2024-09-03 - 2024-12-09 (MWF)
10:00 - 10:50
CAB 265

Labs

Section Capacity Class times Instructor(s)
LAB D21
(46851)
40
2024-09-03 - 2024-12-09 (T)
14:00 - 16:50
ETLC E4-001
LAB D22
(49439)
40
2024-09-03 - 2024-12-09 (T)
14:00 - 16:50
TBD
LAB D31
(46796)
40
2024-09-03 - 2024-12-09 (W)
14:00 - 16:50
ETLC E4-001
LAB D32
(49440)
40
2024-09-03 - 2024-12-09 (W)
14:00 - 16:50
TBD
LAB D41
(46795)
40
2024-09-03 - 2024-12-09 (R)
14:00 - 16:50
ETLC E4-001
LAB D42
(49441)
40
2024-09-03 - 2024-12-09 (R)
14:00 - 16:50
TBD

Seminars

Section Capacity Class times Instructor(s)
SEMINAR E31
(46778)
125
2024-09-03 - 2024-12-09 (W)
12:00 - 12:50
NRE 2-001
SEMINAR E32
(51369)
125
2024-09-03 - 2024-12-09 (W)
12:00 - 12:50
NRE 1-003