Anoushka Ganguli

Grad Teaching Assistantship, Faculty of Engineering - Electrical & Computer Engineering Dept
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Winter Term 2026 (1940)

ECE 450 - Nanoscale Phenomena in Electronic Devices

3 units (fi 8)(EITHER, 3-0-3/2)

Semiconductor device physics, device scaling trends, advanced MOSFET fabrication and the associated quantum mechanical framework in nanoscale systems. Semiconductor devices as a system of elemental components. Quantum phenomena in the evaluation of semiconductor devices. Impact of new materials such as high-k gate dielectrics, copper damascene processing and diffusion barriers on device performance. Choice of channel materials and strain condition for ultrascaled logic devices, RF and power electronic devices. Prerequisite: ECE 302 or E E 340. Credit may be obtained in only one of ECE 450 or E E 450.

LAB H21 (81861)

2026-01-05 - 2026-04-10
T 14:00 - 16:50

LAB H31 (81862)

2026-01-05 - 2026-04-10
W 14:00 - 16:50